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AT45DB011B
DC Characteristics
Symbol
I SB
Parameter
Standby Current
Condition
CS, RESET, WP = V IH , all inputs at
Min
Typ
2
Max
10
Units
μA
CMOS levels
I CC1(1)
I CC2
Active Current, Read Operation
Active Current, Program/Erase
f = 20 MHz; I OUT = 0 mA; V CC = 3.6V
V CC = 3.6V
4
10
10
25
mA
mA
Operation
I LI
I LO
V IL
V IH
V OL
V OH
Input Load Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V IN = CMOS levels
V I/O = CMOS levels
I OL = 1.6 mA; V CC = 2.7V
I OH = -100 μA
2.0
V CC - 0.2V
1
1
0.6
0.4
μA
μA
V
V
V
V
Note:
1. I cc1 during a buffer read is 20mA maximum.
AC Characteristics
Symbol
Parameter
Min
Typ
Max
Units
f SCK
f CAR
t WH
t WL
t CS
t CSS
t CSH
t CSB
t SU
t H
t HO
t DIS
t V
SCK Frequency
SCK Frequency for Continuous Array Read
SCK High Time
SCK Low Time
Minimum CS High Time
CS Setup Time
CS Hold Time
CS High to RDY/BUSY Low
Data In Setup Time
Data In Hold Time
Output Hold Time
Output Disable Time
Output Valid
22
22
250
250
250
5
10
0
20
20
200
18
20
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t XFR
t EP
t P
t PE
t BE
Page to Buffer Transfer/Compare Time
Page Erase and Programming Time
Page Programming Time
Page Erase Time
Block Erase Time
120
10
7
6
7
200
20
15
10
15
μs
ms
ms
ms
ms
t RST
t REC
RESET Pulse Width
RESET Recovery Time
10
1
μs
μs
13
1984J–DFLASH–06/06
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